The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jul. 20, 2012
Masamichi Suzuki, Tokyo, JP;
Tatsuo Shimizu, Tokyo, JP;
Atsuhiro Kinoshita, Kamakura, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a source region, a drain region, an insulating film and a gate electrode. The source region is formed in the semiconductor substrate. The drain region is formed in the semiconductor substrate and being separate from the source region. The insulating film is formed between the source region and the drain region and on or above the semiconductor substrate. The insulating film includes lanthanum aluminate containing at least one element selected from Si, Ge, Mg, Ca, Sr, Ba and N. The lanthanum aluminate contains at least one element selected from Ti, Hf and Zr. The gate electrode is formed on the insulating film.