The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Aug. 23, 2012
Applicants:
Daewoong Kim, Hwaseong-si, KR;
Junkyu Yang, Seoul, KR;
Hongsuk Kim, Yongin-si, KR;
Tae-jong Han, Seoul, KR;
Inventors:
Daewoong Kim, Hwaseong-si, KR;
Junkyu Yang, Seoul, KR;
HongSuk Kim, Yongin-si, KR;
Tae-Jong Han, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and attendant interference between adjacent cells may be reduced.