The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

Sep. 03, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonmo Park, Seongnam-si, KR;

Hyunchul Kim, Seoul, KR;

Hyodong Ban, Suwon-si, KR;

Hyunju Lee, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
H01L 27/108 (2013.01); H01L 21/205 (2013.01); H01L 27/10817 (2013.01); H01L 27/10852 (2013.01); H01L 27/10894 (2013.01); H01L 28/91 (2013.01);
Abstract

Memory devices comprise a lower layer that extends across a cell array region and across a peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Related methods are also provided.


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