The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jan. 11, 2012
Semiconductor device with inverted trapezoidal cross sectional profile in surface areas of substrate
Applicants:
Kazuo Hashimi, Kawasaki, JP;
Hidekazu Sato, Kawasaki, JP;
Inventors:
Kazuo Hashimi, Kawasaki, JP;
Hidekazu Sato, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/76805 (2013.01); H01L 21/3065 (2013.01); H01L 21/76802 (2013.01); H01L 21/76814 (2013.01); H01L 21/02071 (2013.01); H01L 21/02063 (2013.01);
Abstract
A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.