The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Aug. 30, 2013
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise and high reliability can be achieved.