The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Nov. 04, 2011
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Koji Nishizuka, Itami, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Koji Nishizuka, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×10cm, and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.