The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Sep. 17, 2013
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 29/78606 (2013.01);
Abstract
Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.