The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

Mar. 22, 2011
Applicants:

Daigo Sawaki, Kanagawa, JP;

Katsuyuki Yofu, Kanagawa, JP;

Inventors:

Daigo Sawaki, Kanagawa, JP;

Katsuyuki Yofu, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 27/14 (2006.01); H01L 31/00 (2006.01); H01L 29/08 (2006.01); H01L 35/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photoelectric conversion device includes an organic photoelectric conversion layer, and suppresses sensitivity degradation caused by the light irradiation. A photoelectric conversion deviceis formed by stacking a first electrode layer, a photoelectric conversion layerincluding an organic material, and a second electrode layeron a substrate, in which the photoelectric conversion layerhas a bulk hetero structure of a P-type organic semiconductor and an N-type organic semiconductor, and a difference between an ionization potential of the P-type organic semiconductor and an apparent ionization potential of the bulk hetero structure is 0.50 eV or less. Accordingly, it is possible to suppress sensitivity degradation caused by the light irradiation.


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