The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
May. 15, 2013
Applicant:
Hynix Semiconductor Inc., Icheon-si, KR;
Inventor:
Jae Seung Choi, Icheon-shi, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/311 (2006.01); G03F 7/095 (2006.01); G03F 7/00 (2006.01); H01L 21/033 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); H01L 21/31144 (2013.01); G03F 7/095 (2013.01); H01L 21/0338 (2013.01); H01L 21/0337 (2013.01); H01L 27/10894 (2013.01);
Abstract
A method for forming fine patterns of a semiconductor device employs a double patterning characteristic using a mask for forming a first pattern including a line pattern and a mask for separating the line pattern, and a reflow characteristic of a photoresist pattern.