The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jun. 08, 2011
Richard B. Kaner, Pacific Palisades, CA (US);
Sabah K. Bux, Chino Hills, CA (US);
Jean-pierre Fleurial, Altadena, CA (US);
Marc Rodriguez, Granada Hills, CA (US);
Richard B. Kaner, Pacific Palisades, CA (US);
Sabah K. Bux, Chino Hills, CA (US);
Jean-Pierre Fleurial, Altadena, CA (US);
Marc Rodriguez, Granada Hills, CA (US);
California Institute of Technology, Pasadena, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI) with the germanium based precursors.