The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8808553 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 19, 2014

Filed:

Nov. 26, 2012
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Akio Goto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B41J 2/14 (2006.01); B41J 2/16 (2006.01); B41J 2/335 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
B44C 1/227 (2013.01); B41J 2/1631 (2013.01); B41J 2/1628 (2013.01); B41J 2/1603 (2013.01);
Abstract

A process for producing a liquid ejection head including a silicon substrate having a first surface and a second surface that is a surface on an opposite side to the first surface, an ejection energy generating element which is formed on a side of the first surface side and generates energy for ejecting a liquid, a cavity formed in the second surface and a liquid supply port which is formed in a bottom part of the cavity and communicates with the first surface, including, in the following order: (1) forming the cavity in the second surface of the silicon substrate by a first crystal anisotropic etching; (2) forming a chemical leading hollow in a slope of the cavity; (3) expanding the cavity by a second crystal anisotropic etching; and (4) forming the liquid supply port in a bottom face of the cavity by dry etching with the use of an ion.


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