The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jul. 30, 2013
National Chung Hsing University, Taichung, TW;
National Chung Hsing University, Taichung, TW;
Abstract
A method for forming a ZrOoxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrOfilm on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.