The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Sep. 07, 2011
Applicants:
Fu-hsing LU, Taichung, TW;
Jhu-ling Zeng, Tainan, TW;
Huan-ping Teng, Kaohsiung, TW;
Inventors:
Assignee:
National Chung Hsing University, Taichung, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 28/04 (2006.01); C25D 11/02 (2006.01); C25D 11/26 (2006.01); C25D 11/16 (2006.01); C25D 9/04 (2006.01);
U.S. Cl.
CPC ...
C25D 9/04 (2013.01); C25D 11/16 (2013.01); C23C 28/042 (2013.01); C25D 11/026 (2013.01); C25D 11/26 (2013.01);
Abstract
A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.