The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jun. 19, 2012
Robert B. Wood, Niwot, CO (US);
Jea Woong Hyun, South Jordan, UT (US);
Hairong Sun, Superior, CO (US);
Warner Losh, Broomfield, CO (US);
David Flynn, Sandy, UT (US);
Robert B. Wood, Niwot, CO (US);
Jea Woong Hyun, South Jordan, UT (US);
Hairong Sun, Superior, CO (US);
Warner Losh, Broomfield, CO (US);
David Flynn, Sandy, UT (US);
Fusion-io, Inc., Salt Lake City, UT (US);
Abstract
A method for adaptive voltage range management in non-volatile memory is described. The method includes establishing an adaptive voltage range for a memory element of an electronic memory device. The memory element includes at least two states. The adaptive voltage range comprises a lower state and an upper state. The method also includes establishing an adjustment process to implement a first adjustment of an abode characteristic of a first state and to implement a second adjustment of an abode characteristic of a second state in the adaptive voltage range in response to a trigger event, wherein the first adjustment of an abode characteristic of the first state is different from the second adjustment of an abode characteristic of the second state.