The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jan. 17, 2012
Jonathan Brodsky, Richardson, TX (US);
Jonathan Brodsky, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An active-FET ESD cell () for protecting an I/O pad () includes a first MOS transistor () with a gate oxide () of a first thickness and a second MOS transistor () with a gate oxide () of a second thickness greater than the first thickness at least by the amount required to handle the source-follower threshold voltage, the first transistor having its drain () tied to the I/O pad, its source () tied to ground, and its gate () tied to the source () of the second transistor and resistively connected to ground (), and the second transistor having its drain () tied to the I/O pad and its gate tied to a capacitor () connected to the I/O pad and to a resistor () connected to ground.