The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2014

Filed:

Nov. 03, 2011
Applicants:

Sohei Manabe, San Jose, CA (US);

Keh-chiang Ku, Cupertino, CA (US);

Vincent Venezia, Los Gatos, CA (US);

Hsin-chih Tai, San Jose, CA (US);

Duli Mao, Sunnyvale, CA (US);

Howard E. Rhodes, San Martin, CA (US);

Inventors:

Sohei Manabe, San Jose, CA (US);

Keh-Chiang Ku, Cupertino, CA (US);

Vincent Venezia, Los Gatos, CA (US);

Hsin-Chih Tai, San Jose, CA (US);

Duli Mao, Sunnyvale, CA (US);

Howard E. Rhodes, San Martin, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01);
U.S. Cl.
CPC ...
Abstract

Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.


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