The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Aug. 10, 2012
Peter Nelle, Munich, DE;
Uwe Schmalzbauer, Hoehenkirchen-Siegertsbrunn, DE;
Juergen Holzmueller, Vierkirchen, DE;
Markus Zundel, Egmating, DE;
Peter Nelle, Munich, DE;
Uwe Schmalzbauer, Hoehenkirchen-Siegertsbrunn, DE;
Juergen Holzmueller, Vierkirchen, DE;
Markus Zundel, Egmating, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a main body having a single crystalline semiconductor body. A layered structure directly adjoins a central portion of a main surface of the main body and includes a hard dielectric layer provided from a first dielectric material with Young's modulus greater than 10 GPa. A stress relief layer directly adjoins the layered structure opposite to the main body and extends beyond an outer edge of the layered structure. Providing the layered structure at a distance to the edge of the main body and covering the outer surface of the layered structures with the stress relief layer enhances device reliability.