The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Oct. 17, 2012
Texas Instruments Deutschland Gmbh, Freising, DE;
Christoph Dirnecker, Eching, DE;
Berthold Staufer, Moosburg, DE;
Texas Instruments Deutschland GmbH, Freising, DE;
Abstract
An electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and an integrated circuit back end thin film resistor and a method of manufacturing the same is provided. The semiconductor structure comprises a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. Furthermore, there is a second dielectric layer which is disposed on the bottom plate of the capacitor and on top of the thin film resistor body. A top plate of the capacitor is disposed on the second dielectric layer in a region of the second dielectric layer which is defined by the lateral dimensions of the bottom plate of the capacitor. The bottom plate and the resistor body are laterally spaced apart layers which are both disposed on the first dielectric layer and which are composed of a same thin film material.