The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jun. 18, 2010
Takashi Kyono, Itami, JP;
Yohei Enya, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Katsushi Akita, Itami, JP;
Masaki Ueno, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Masahiro Adachi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Takashi Kyono, Itami, JP;
Yohei Enya, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Katsushi Akita, Itami, JP;
Masaki Ueno, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Masahiro Adachi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A nitride-based semiconductor light-emitting element LEor LDhas: a gallium nitride substratehaving a principal surfacewhich makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer; a second gallium nitride-based semiconductor layer; and a light-emitting layerincluding a plurality of well layers of InGaN and a plurality of barrier layersof a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layersis the direction from the n-type gallium nitride-based semiconductor layertoward the second gallium nitride-based semiconductor layer