The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Nov. 30, 2009
Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device
Hiroshi Yumoto, Kagoshima, JP;
Shuji Yoneda, Kagoshima, JP;
Tomokazu Mukai, Kagoshima, JP;
Katsuhiko Takeuchi, Kanagawa, JP;
Hiroshi Yumoto, Kagoshima, JP;
Shuji Yoneda, Kagoshima, JP;
Tomokazu Mukai, Kagoshima, JP;
Katsuhiko Takeuchi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.