The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Apr. 03, 2012
Tomomitsu Risaki, Chiba, JP;
Jun Osanai, Chiba, JP;
Tomomitsu Risaki, Chiba, JP;
Jun Osanai, Chiba, JP;
Seiko Instruments, Inc., Chiba, JP;
Abstract
Trench portions () are formed in a well () in order to provide unevenness in the well (). A gate electrode () is formed via an insulating film () on the upper surface and inside of the trench portions (). A source region () is formed on one side of the gate electrode () in a gate length direction while a drain region () on another side. Both of the source region () and the drain region () are formed down to near the bottom portion of the gate electrode (). By deeply forming the source region () and the drain region (), current uniformly flows through the whole trench portions (), and the unevenness formed in the well () increases the effective gate width to decrease the on-resistance of a semiconductor deviceand to enhance the drivability thereof.