The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Feb. 13, 2013
Renesas Electronics Corporation, Kawasaki, JP;
Hiroaki Katou, Kanagawa, JP;
Taro Moriya, Kanagawa, JP;
Hiroyoshi Kudou, Kanagawa, JP;
Satoshi Uchiya, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A trench gate type MISFET and a diode are formed in a semiconductor substrate. First and second trenches are formed in the semiconductor substrate. A gate electrode is formed in the first trench through a gate insulating film. A dummy gate electrode is formed in the second trench through a dummy gate insulating film. A cathode n-type semiconductor region and an anode p-type semiconductor region are formed in the semiconductor substrate and the second trench is formed so as to surround the n-type semiconductor region in a planar view. A part of the anode p-type semiconductor region is formed directly below the n-type semiconductor region, so that a PN junction is formed between the part of the anode p-type semiconductor region and the n-type semiconductor region. Thereby a diode is formed. The dummy gate electrode is electrically coupled to one of an anode and a cathode.