The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Apr. 01, 2013
Fuji Electric Co., Ltd., Kawasaki, JP;
Hiroshi Nakamura, Matsumoto, JP;
Shigemi Miyazawa, Matsumoto, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
Aspects of the invention can include a semiconductor device that includes an output stage IGBT and a Zener diode on the same semiconductor substrate. The IGBT can include a first p well layer, an n emitter region on the surface region of the first p well layer, a gate electrode deposited on a gate insulating film, and an emitter electrode on the emitter region. The Zener diode can include a player formed in the surface region of a second p well layer in the place different from the first p well layer and has a higher concentration than the second p well layer, an anode electrode in ohmic contact with the surface of the player, an nlayer having a lower concentration than the second p well layer, and a cathode electrode in Schottky contact with the surface of the nlayer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile