The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Oct. 10, 2008
Masakazu Takao, Kyoto, JP;
Kazuhiko Senda, Kyoto, JP;
Masakazu Takao, Kyoto, JP;
Kazuhiko Senda, Kyoto, JP;
Rohm Co., Ltd., Kyoto-Shi, Kyoto-Fu, JP;
Abstract
A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided. The semiconductor light emitting device including: a semiconductor substrate structure including a semiconductor substrate, a first metal layer placed on a first surface of the semiconductor substrate, and a second metal layer placed on a second surface of the semiconductor substrate; and a light emitting diode structure including a third metal layer placed on the semiconductor substrate structure, a current control layer placed on the third metal layer and composed of a transparent insulating film and a current control electrode, an epitaxial growth layer placed on the current control layer, and a surface electrode placed on the epitaxial growth layer, wherein the semiconductor substrate structure and the light emitting diode structure are bonded by using the first metal layer and the third metal layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile