The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Mar. 04, 2011
Hwan Hee Jeong, Seoul, KR;
Sang Youl Lee, Seoul, KR;
Ji Hyung Moon, Seoul, KR;
June O Song, Seoul, KR;
Kwang Ki Choi, Seoul, KR;
Dae Sung Kang, Seoul, KR;
Hwan Hee Jeong, Seoul, KR;
Sang Youl Lee, Seoul, KR;
Ji Hyung Moon, Seoul, KR;
June O Song, Seoul, KR;
Kwang Ki Choi, Seoul, KR;
Dae Sung Kang, Seoul, KR;
LG Innotek Co., Ltd., Seoul, KR;
Abstract
Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.