The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jul. 02, 2008
Applicant:
Takeshi Kamikawa, Tenri, JP;
Inventor:
Takeshi Kamikawa, Tenri, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor light emitting device includes an n-type GaN substrate () that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (), a p-type AlGaInN cladding layer () under the p-type AlGaInN contact layer (), and a p-type AlGaInN layer (). A protection film () made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.