The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Apr. 15, 2011
Nami Okajima, Osaka, JP;
Masahiro Fujiwara, Osaka, JP;
Nami Okajima, Osaka, JP;
Masahiro Fujiwara, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device () includes: a first thin film transistor () of a first conductivity type formed on a substrate for each pixel; and a plurality of photosensor sections (). Each photosensor section () includes a photodetecting portion including a thin film diode (), a capacitor () for storing a photocurrent occurring in the thin film diode (), and a second thin film transistor () of the first conductivity type, the photodetecting portion being connected to the capacitor () via the second thin film transistor (); the first and second thin film transistors () and the thin film diode () have semiconductor layers made of the same semiconductor film; and a characteristic of the first thin film transistor () and a characteristic of the second thin film transistor () are different. As a result, the characteristics of the thin film transistors for use in the pixels and the thin film transistors for use in the photosensor sections can be controlled in accordance with the characteristics required of the respective thin film transistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile