The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Apr. 18, 2012
Byoung-keon Park, Yongin, KR;
Jong-ryuk Park, Yongin, KR;
Tak-young Lee, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Heung-yeol NA, Yongin, KR;
Byoung-Keon Park, Yongin, KR;
Jong-Ryuk Park, Yongin, KR;
Tak-Young Lee, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Heung-Yeol Na, Yongin, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating pattern, the interlayer insulating layer having a contact hole and an opening extending therethrough, the contact hole exposing a source area and a drain area of the semiconductor layer, and the opening exposing a channel area of the semiconductor layer, and a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode being connected with the source area and the drain electrode being connected with the drain area of the semiconductor layer.