The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Aug. 28, 2013
Ashwini K. Sinha, East Amherst, NY (US);
Lloyd Anthony Brown, East Amherst, NY (US);
Serge Marius Campeau, Lancaster, NY (US);
Ashwini K. Sinha, East Amherst, NY (US);
Lloyd Anthony Brown, East Amherst, NY (US);
Serge Marius Campeau, Lancaster, NY (US);
Praxair Technology, Inc., Danbury, CT (US);
Abstract
A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4.