The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2014

Filed:

May. 09, 2008
Applicants:

Min Yuan, Yorktown Heights, NY (US);

David B. Mitzi, Mahopac, NY (US);

Wei Liu, Yorktown Heights, NY (US);

Inventors:

Min Yuan, Yorktown Heights, NY (US);

David B. Mitzi, Mahopac, NY (US);

Wei Liu, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0272 (2006.01);
U.S. Cl.
CPC ...
Abstract

Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, CuInGaSbSeS, provided, wherein: 0≦x≦1, and ranges therebetween; 0≦y≦0.2, and ranges therebetween; 0.001≦z≦0.02, and ranges therebetween; and 0≦w≦2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.


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