The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Aug. 09, 2012
Yumi Hayashi, Zama, JP;
Yumi Hayashi, Zama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes sequentially forming a first insulator, a second insulator, and a sacrificial layer on a semiconductor substrate, and forming plural core materials from the sacrificial layer and the second insulator. The method further includes forming first and second interconnects on side surfaces of each core material to form plural first interconnects and plural second interconnects alternately, each first interconnect having a first side surface in contact with a core material and a second side surface positioned on an opposite side of the first side surface, and each second interconnect having a third side surface in contact with a core material and a fourth side surface positioned on an opposite side of the third side surface. The method further includes removing the sacrificial layer so that the second insulator remains, after the first and second interconnects are formed.