The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Apr. 10, 2012
Olivier Gourhant, Goncelin, FR;
David Barge, Grenoble, FR;
Clément Gaumer, Seyssinet-Pariset, FR;
Mickaël Gros-jean, Grenoble, FR;
Olivier Gourhant, Goncelin, FR;
David Barge, Grenoble, FR;
Clément Gaumer, Seyssinet-Pariset, FR;
Mickaël Gros-Jean, Grenoble, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A method for forming the gate insulator of a MOS transistor, including the steps of: a) forming a thin silicon oxide layer at the surface of a semiconductor substrate; b) incorporating nitrogen atoms into the silicon oxide layer by plasma nitridation at a temperature lower than 200° C., to transform this layer into a silicon oxynitride layer; and c) coating the silicon oxynitride layer with a layer of a material of high dielectric constant, wherein steps b) and c) follow each other with no intermediate anneal step.