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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8802477 B1

PDFFull Text
Expired
Date of Patent:
Aug. 12, 2014

Filed:

Feb. 26, 2010

Heterojunction iii-v photovoltaic cell fabrication

Applicants:

Stephen W. Bedell, Yorktown Heights, NY (US);

Norma Sosa Cortes, Yorktown Heights, NY (US);

Keith E. Fogel, Yorktown Heights, NY (US);

Devendra Sadana, Yorktown Heights, NY (US);

Ghavam Shahidi, Yorktown Heights, NY (US);

Davood Shahrjerdi, Yorktown Heights, NY (US);

Inventors:

Stephen W. Bedell, Yorktown Heights, NY (US);

Norma Sosa Cortes, Yorktown Heights, NY (US);

Keith E. Fogel, Yorktown Heights, NY (US);

Devendra Sadana, Yorktown Heights, NY (US);

Ghavam Shahidi, Yorktown Heights, NY (US);

Davood Shahrjerdi, Yorktown Heights, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Calvin Choi

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 21/762 (2006.01); H01L 21/20 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/20 (2013.01);
Abstract

A method for forming a heterojunction III-V photovoltaic (PV) cell includes performing layer transfer of a base layer from a wafer of a III-V substrate, the base layer being less than about 20 microns thick; forming an intrinsic layer on the base layer; forming an amorphous silicon layer on the intrinsic layer; and forming a transparent conducting oxide layer on the amorphous silicon layer. A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.

Find Patent Forward Citations

Bedell, Stephen. (2014). Heterojunction iii-v photovoltaic cell fabrication (U.S. Patent No. 8802477). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8802477

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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