The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Feb. 14, 2012
Michael Spencer, Ithica, NY (US);
Mvs Chandrashekhar, Columbia, SC (US);
Michael Spencer, Ithica, NY (US);
Mvs Chandrashekhar, Columbia, SC (US);
Widetronix, Inc., Ithaca, NY (US);
Abstract
This is a novel SiC betavoltaic device (as an example) which comprises one or more 'ultra shallow' P+ NSiC junctions and a pillared or planar device surface (as an example). Junctions are deemed 'ultra shallow', since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). This is a betavoltaic device, made of ultra-shallow junctions, which allows such penetration of emitted lower energy electrons, thus, reducing or eliminating losses through electron-hole pair recombination at the surface.