The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jun. 22, 2010
Yoshiaki Ikenoue, Yokohama, JP;
Hisayuki Miki, Chiba, JP;
Kenzo Hanawa, Ichihara, JP;
Yasumasa Sasaki, Kamakura, JP;
Hitoshi Yokouchi, Ichihara, JP;
Ryoko Konta, Chiba, JP;
Hiroaki Kaji, Chiba, JP;
Yoshiaki Ikenoue, Yokohama, JP;
Hisayuki Miki, Chiba, JP;
Kenzo Hanawa, Ichihara, JP;
Yasumasa Sasaki, Kamakura, JP;
Hitoshi Yokouchi, Ichihara, JP;
Ryoko Konta, Chiba, JP;
Hiroaki Kaji, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.