The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jul. 28, 2011
Shiwen Huang, Fremont, CA (US);
Fenglin Liu, Milpitas, CA (US);
Qiping Zhong, San Jose, CA (US);
Kyusik Shin, Pleasanton, CA (US);
Yingjian Chen, Fremont, CA (US);
Shiwen Huang, Fremont, CA (US);
Fenglin Liu, Milpitas, CA (US);
Qiping Zhong, San Jose, CA (US);
Kyusik Shin, Pleasanton, CA (US);
Yingjian Chen, Fremont, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
The present disclosure describes a method for manufacturing a full wraparound shield damascene write head through the implementation of a three layered (tri-layered) hard mask. According to an embodiment of the invention, the various layers of hard mask are used for different purposes during the formation of a write head. The wraparound shield head of the present invention exhibits improved physical characteristics that further result in improved performance characteristics. Use of the hard mask layers according to the present invention allows for use of manufacturing processes that can be more closely controlled than those processes used in other processes. For example, smaller dimension lithographic techniques can be used. Also, reliance on certain CMP processes is not necessary where the use of CMP processes is not as well-controlled as deposition or lithographic techniques as is possible using the present invention.