The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Feb. 14, 2012
Shigeru Kanematsu, Kanagawa, JP;
Yuki Yanagisawa, Kanagawa, JP;
Matsuo Iwasaki, Nagasaki, JP;
Sony Corporation, Tokyo, JP;
Abstract
An operation method of a semiconductor device, includes providing one or more memory elements each including a first semiconductor layer, second and third semiconductor layers, a dielectric film and a conductive film, a first electrode, a second electrode, and a third electrode, and performing operation of writing information on a memory element to be driven of the one or more memory elements. The operation of writing is performed by forming a filament in a region between the second and third semiconductor layers, which is a conductive path electrically linking these semiconductor layers, the filament being formed by causing a dielectric breakdown of at least a part of the dielectric film, through application of a voltage equal to or higher than a predetermined threshold between the second and third electrodes, thereby causing an electric current to flow between the conductive film and the third semiconductor layer.