The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Mar. 10, 2010
Applicants:

Jawoong Lee, Gyeonggi-do, KR;

Jun Hee Cho, Chungju-si, KR;

Jong Beom Choi, Seoul, KR;

Inventors:

Jawoong Lee, Gyeonggi-do, KR;

Jun hee Cho, Chungju-si, KR;

Jong Beom Choi, Seoul, KR;

Assignee:

Zeeann Co., Ltd, Hanam-si Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H01L 27/146 (2006.01); H04N 5/355 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); H04N 5/35554 (2013.01); H04N 3/37452 (2013.01);
Abstract

Disclosed are a CMOS image sensor having a wide dynamic range and a sensing method thereof. Each unit pixel of the CMOS image sensor of the present invention includes multiple processing units, so that one shuttering section for the image generation of one image frame can be divided into multiple sections to separately shutter and sample the divided sections by each processing unit. Thus, the image sensor of the present invention enables many shuttering actions to be performed in the multiple processing units, respectively, and the multiple processing units to separately sample each floating diffusion voltage caused by the shuttering actions, thereby realizing a wide dynamic range.


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