The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Mar. 05, 2010
Applicants:

Bart Balm, Kekerdom, NL;

Jeroen Bouwman, Nijmegen, NL;

Léon C. M. Van Den Oever, Rosmalen, NL;

Inventors:

Bart Balm, Kekerdom, NL;

Jeroen Bouwman, Nijmegen, NL;

Léon C. M. van den Oever, Rosmalen, NL;

Assignee:

Epcos AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
Abstract

Circuit unit (CU) comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor. Either a source (S) or a drain (D) of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector (C) or an emitter (E) of the heterojunction bipolar transistor.


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