The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Oct. 28, 2011
Applicants:

Xiaojun Cui, Shenzhen, CN;

Huazhang Chen, Shenzhen, CN;

Jinyuan an, Shenzhen, CN;

Jianli Liu, Shenzhen, CN;

Inventors:

Xiaojun Cui, Shenzhen, CN;

Huazhang Chen, Shenzhen, CN;

Jinyuan An, Shenzhen, CN;

Jianli Liu, Shenzhen, CN;

Assignee:

ZTE Corporation, Shenzhen, Guangdong Province, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01); H03F 3/21 (2006.01); H03F 3/60 (2006.01); H03F 1/02 (2006.01);
U.S. Cl.
CPC ...
H03F 3/211 (2013.01); H03F 2200/411 (2013.01); H03F 3/602 (2013.01); H03F 1/0288 (2013.01); H03F 3/68 (2013.01);
Abstract

The present invention relates to a power amplifier apparatus and power amplifier circuit, and the power amplifier circuit uses the Doherty circuit structure, and uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier of the Doherty circuit structure, and uses lateral double-diffused metal oxide semiconductor (LDMOS) to achieve a Peak amplifier. The power amplifier apparatus and power amplifier circuit in the present invention improves the efficiency of the power amplifier.


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