The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Sep. 08, 2008
Applicant:

Christopher Harris, Täby, SE;

Inventor:

Christopher Harris, Täby, SE;

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H01L 21/329 (2006.01); H01L 27/08 (2006.01); H01L 29/66 (2006.01); H01L 29/36 (2006.01); H01L 29/47 (2006.01); H01L 29/40 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H04L 27/0811 (2013.01); H01L 29/47 (2013.01); H01L 29/402 (2013.01); H01L 29/1608 (2013.01); H01L 27/0808 (2013.01); H01L 29/1602 (2013.01); H01L 29/66174 (2013.01); H01L 29/2003 (2013.01); H01L 29/267 (2013.01); H01L 29/36 (2013.01);
Abstract

A varactor diode includes a contact layer having a first conductivity type, a voltage blocking layer having the first conductivity and a first net doping concentration on the contact layer, a blocking junction on the voltage blocking layer, and a plurality of discrete doped regions in the voltage blocking layer and spaced apart from the carrier injection junction. The plurality of discrete doped regions have the first conductivity type and a second net doping concentration that is higher than the first net doping concentration, and the plurality of discrete doped regions are configured to modulate the capacitance of the varactor diode as a depletion region of the varactor diode expands in response to a reverse bias voltage applied to the blocking junction. Related methods of forming a varactor diode are also disclosed.


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