The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Dec. 20, 2012
Steven M. Watts, Mountain View, CA (US);
Kiseok Moon, Pleasanton, CA (US);
Steven M. Watts, Mountain View, CA (US);
Kiseok Moon, Pleasanton, CA (US);
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A magnetic junction is provided. The magnetic junction includes a reference stack, a nonmagnetic spacer layer and a free layer. The reference stack includes a high perpendicular magnetic anisotropy (PMA) layer and a graded polarization enhancement layer (PEL) between the high PMA and nonmagnetic spacer layers. The PEL is magnetically coupled with the reference layer. The PEL includes magnetic layers and nonmagnetic insertion layers. At least part of the PEL has a spin polarization greater than the PMA layer's. The nonmagnetic insertion layers are configured such that the magnetic layers are ferromagnetically coupled and the crystalline orientations of the high PMA and nonmagnetic spacer layers are decoupled. Each nonmagnetic insertion layer's thickness is insufficient for the crystalline orientations to be decoupled in the absence of the remaining nonmagnetic insertion layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.