The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Jun. 06, 2011
Xiang LU, Palo Alto, CA (US);
Albert Bergemont, Palo Alto, CA (US);
Xiang Lu, Palo Alto, CA (US);
Albert Bergemont, Palo Alto, CA (US);
Maxim Integrated Products, Inc., San Jose, CA (US);
Abstract
Techniques are described to form a low-noise, high-gain semiconductor device. In one or more implementations, the device includes a substrate including a first dopant material having a concentration ranging from about 1×10/cmto about 1×10/cm. The substrate also includes at least two active regions formed proximate to a surface of the substrate. The at least two active regions include a second dopant material, which is different than the first dopant material. The device further includes a gate structure formed over the surface of the substrate between the active regions. The gate structure includes a doped polycrystalline layer and an oxide layer formed over the surface between the surface and the doped polycrystalline layer. The doped polycrystalline layer includes the first dopant material having a concentration ranging from about 1×10/cmto about 1×10/cm.