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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8796693 B1

PDFFull Text
Date of Patent:
Aug. 05, 2014

Filed:

Dec. 26, 2012

Successive ionic layer adsorption and reaction process for depositing epitaxial zno on iii-nitride-based light emitting diode and light emitting diode including epitaxial zno

Applicant:

Seoul Semiconductor Co., Ltd., Ansan-si, KR;

Inventors:

Jacob J. Richardson, Goleta, CA (US);

Daniel Estrada, Goleta, CA (US);

Evan C. O'Hara, Goleta, CA (US);

Haoran Shi, Goleta, CA (US);

Shin Chanseob, Ansan-si, KR;

Yeojin Yoon, Ansan-si, KR;

Assignee:

Seoul Semiconductor Co., Ltd., Ansan-si, KR;

Attorney:

H.C. Park & Associates, PLC

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.

Find Patent Forward Citations

Richardson, Jacob. (2014). Successive ionic layer adsorption and reaction process for depositing epitaxial zno on iii-nitride-based light emitting diode and light emitting diode including epitaxial zno (U.S. Patent No. 8796693). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8796693

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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