The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Aug. 23, 2012
Applicants:

Feng-weei Kuo, Pingtung County, TW;

Ko-ruey Jen, Taipei, TW;

Chia-hua Yu, New Taipei, TW;

I-fang Wang, Changhua County, TW;

Inventors:

Feng-Weei Kuo, Pingtung County, TW;

Ko-Ruey Jen, Taipei, TW;

Chia-Hua Yu, New Taipei, TW;

I-Fang Wang, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pixel structure, a method of manufacturing the pixel structure, and an active device matrix substrate are provided. The pixel structure includes a first patterned metal layer having a common line and a gate; a first insulation layer; a semiconductor pattern; a second patterned metal layer having a source and a drain both electrically connected to the semiconductor pattern; a second insulation layer having a contact opening exposing the drain; and an electrode layer having a common electrode, and a pixel electrode connected to the drain through the contact opening. The common line, the first insulation layer, and the pixel electrode constitute a first storage capacitor. The common line, the drain, and the common electrode constitute a sandwich structure. The common line, the first insulation layer, and the drain constitute a second storage capacitor. The drain, the second insulation layer, and the common electrode constitute a third storage capacitor.


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