The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Sep. 12, 2011
Jong-han Jeong, Suwon-si, KR;
Jae-kyeong Jeong, Suwon-si, KR;
Jin-seong Park, Suwon-si, KR;
Yeon-gon MO, Suwon-si, KR;
Hui-won Yang, Suwon-si, KR;
Min-kyu Kim, Suwon-si, KR;
Tae-kyung Ahn, Suwon-si, KR;
Hyun-soo Shin, Suwon-si, KR;
Hun Jung Lee, Suwon-si, KR;
Jong-han Jeong, Suwon-si, KR;
Jae-kyeong Jeong, Suwon-si, KR;
Jin-seong Park, Suwon-si, KR;
Yeon-gon Mo, Suwon-si, KR;
Hui-won Yang, Suwon-si, KR;
Min-kyu Kim, Suwon-si, KR;
Tae-kyung Ahn, Suwon-si, KR;
Hyun-soo Shin, Suwon-si, KR;
Hun jung Lee, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.