The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Sep. 13, 2012
Applicants:

Je-hun Lee, Seoul, KR;

Ki-won Kim, Suwon-si, KR;

Do-hyun Kim, Seongnam-si, KR;

Woo-geun Lee, Yongin-si, KR;

Kap-soo Yoon, Seoul, KR;

Inventors:

Je-Hun Lee, Seoul, KR;

Ki-Won Kim, Suwon-si, KR;

Do-Hyun Kim, Seongnam-si, KR;

Woo-Geun Lee, Yongin-si, KR;

Kap-Soo Yoon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.


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