The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Feb. 06, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Takahisa Kanemura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one embodiment, a semiconductor device includes a substrate, and a source region of a first conductivity type disposed on a surface of the substrate. The device further includes a tunnel insulator disposed on the source region, and an impurity semiconductor layer of a second conductivity type disposed on the tunnel insulator, the second conductivity type being different from the first conductivity type. The device further includes a gate insulator disposed on the impurity semiconductor layer, and a gate electrode disposed on the gate insulator. The device further includes a drain region of the second conductivity type disposed on the substrate so as to be separated from the impurity semiconductor layer, or disposed on the substrate as a portion of the impurity semiconductor layer.