The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Dec. 01, 2009
Eun-hong Lee, Anyang-si, KR;
Un-jeong Kim, Busan, KR;
Woo-jong Yu, Suwon-si, KR;
Young-hee Lee, Suwon-si, KR;
Eun-hong Lee, Anyang-si, KR;
Un-jeong Kim, Busan, KR;
Woo-jong Yu, Suwon-si, KR;
Young-hee Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Sungkyunkwan University Foundation for Corporate Collaboration, Gyeonggi-Do, KR;
Abstract
A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.