The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Sep. 23, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Nobuaki Yasutake, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A memory cell comprises a diode layer, a variable resistance layer, a first electrode layer. The diode layer functions as a rectifier element. The variable resistance layer functions as a variable resistance element. The first electrode layer is provided between the variable resistance layer and the diode layer. The first electrode layer comprises a titanium nitride layer configured by titanium nitride. Where a first ratio is defined as a ratio of titanium atoms to nitrogen atoms in a first region in the titanium nitride layer and a second ratio is defined as a ratio of titanium atoms to nitrogen atoms in a second region which is in the titanium nitride layer and is nearer to the variable resistance layer than is the first region, the second ratio is larger than the first ratio.